Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 30V N channel Trench MOSFET utilizes a unique structure combining the benefits of Low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Users will also gain several other key benefits: Performance c.
• Low on - resistance
• Fast switching speed
• Low threshold
• Low gate drive
• 3mm x 2mm MLP
APPLICATIONS
• MOSFET gate drive
• LCD backlight inverters
• Motor control
D2
PINOUT
5
D2
6
D1
7
D1
8
ORDERING INFORMATION
DEVICE ZXMC3AM832TA ZXMC3AM832TC REEL 7’‘ 13’‘ TAPE WIDTH 8mm 8mm QUANTITY PER REEL 3000 units 10000 units
G2 S2 G1 S1
4
3
2
1
3 x 2 Dual MLP
DEVICE MARKING
C01
underside view
PROVISIONAL ISSUE E - JULY 2004 1
ZXMC3AM832
ABSOLUTE MAXIMUM RATINGS
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@V GS =10V; T A =25 Њ C (b)(f) @V GS =10V; T A .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ZXMC3AMC |
Diodes |
30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | |
2 | ZXMC3A16DN8 |
Zetex Semiconductors |
COMPLEMENTARY 30V MOSFET | |
3 | ZXMC3A16DN8Q |
DIODES |
30V MOSFET | |
4 | ZXMC3A17DN8 |
Zetex Semiconductors |
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET | |
5 | ZXMC3A18DN8 |
Zetex Semiconductors |
COMPLEMENTARY 30V MOSFET | |
6 | ZXMC3F31DN8 |
Diodes |
30V SO8 Complementary dual MOSFET | |
7 | ZXMC10A816N8 |
Diodes |
Dual MOSFET | |
8 | ZXMC4559DN8 |
Zetex Semiconductors |
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET | |
9 | ZXMC4A16DN8 |
Zetex Semiconductors |
COMPLEMENTARY 40V ENHANCEMENT MODE MOSFET | |
10 | ZXMC6A09DN8 |
Zetex Semiconductors |
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET | |
11 | ZXM240128A6 |
Huizhou City |
Display Module | |
12 | ZXM41N0F |
Zetex Semiconductors |
SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET |