This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICAT.
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• Motor Drive
• LCD backlighting
ORDERING INFORMATION
DEVICE
REEL TAPE WIDTH
ZXMC3A16DN8TA 7’‘ 12mm
ZXMC3A16DN8TC 13’‘ 12mm
QUANTITY PER REEL
500 units
2500 units
DEVICE MARKING
ZXMC 3A16
Q1 = N-CHANNEL
SO8
Q2 = P-CHANNEL
PINOUT
Top view
ISSUE 1 - OCTOBER 2005 1
ZXMC3A16DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous
Drain
Current@VGS=10V; @VGS=10V; @VGS=10V;
TA=25ЊC TA=70ЊC TA=25ЊC
(b)(d) (b)(d) (a)(d)
Pulsed Drain .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ZXMC3A16DN8Q |
DIODES |
30V MOSFET | |
2 | ZXMC3A17DN8 |
Zetex Semiconductors |
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET | |
3 | ZXMC3A18DN8 |
Zetex Semiconductors |
COMPLEMENTARY 30V MOSFET | |
4 | ZXMC3AM832 |
Zetex Semiconductors |
30V MOSFET | |
5 | ZXMC3AMC |
Diodes |
30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | |
6 | ZXMC3F31DN8 |
Diodes |
30V SO8 Complementary dual MOSFET | |
7 | ZXMC10A816N8 |
Diodes |
Dual MOSFET | |
8 | ZXMC4559DN8 |
Zetex Semiconductors |
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET | |
9 | ZXMC4A16DN8 |
Zetex Semiconductors |
COMPLEMENTARY 40V ENHANCEMENT MODE MOSFET | |
10 | ZXMC6A09DN8 |
Zetex Semiconductors |
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET | |
11 | ZXM240128A6 |
Huizhou City |
Display Module | |
12 | ZXM41N0F |
Zetex Semiconductors |
SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET |