N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 350 Volt VDS * RDS(on)=40Ω ZVNL535A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL.
* 350 Volt VDS
* RDS(on)=40Ω
ZVNL535A
D G
S
E-Line TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 350 90 800 ± 20 700 -55 to +150 UNIT V mA mA V mW °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) S.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ZVNL110A |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
2 | ZVNL110G |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET | |
3 | ZVNL120A |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
4 | ZVNL120G |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET | |
5 | ZVNL120G |
Diodes |
200V N-CHANNEL ENHANCEMENT MODE MOSFET | |
6 | ZVN0117TA |
ETC |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
7 | ZVN0120A |
ETC |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
8 | ZVN0124A |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
9 | ZVN0535A |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
10 | ZVN0540A |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
11 | ZVN0545A |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
12 | ZVN0545G |
DIODES |
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |