N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 1 APRIL 94 FEATURES * 170 Volt BVDS APPLICATIONS * Telephone handsets ZVN0117TA D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VDS.
* 170 Volt BVDS APPLICATIONS
* Telephone handsets
ZVN0117TA
D G
S
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg
E-Line TO92 Compatible VALUE 170 160 2
± 20
UNIT V mA A V mW °C
700 -55 to +150
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. BVDSS IGSS IDSS ID(on) RDS(on) 100 23 23 170 100 10 50 MAX. UNIT CONDITIONS. V nA
µA µA
Drain-Source Breakdown V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ZVN0120A |
ETC |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
2 | ZVN0124A |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
3 | ZVN0535A |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
4 | ZVN0540A |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
5 | ZVN0545A |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
6 | ZVN0545G |
DIODES |
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
7 | ZVN0545G |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
8 | ZVN1409A |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
9 | ZVN2106 |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
10 | ZVN2106 |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
11 | ZVN2106A |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
12 | ZVN2106A |
Diodes |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |