N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on) = 0.5Ω * Spice model available ZVN4310A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Practical Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Po.
* 100 Volt VDS
* RDS(on) = 0.5Ω
* Spice model available
ZVN4310A
D G
S
E-Line TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25°C Practical Continuous Drain Current at T amb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25°C Practical Power Dissipation at T amb=25°C
* Operating and Storage Temperature Range SYMBOL V DS ID I DP I DM V GS P tot P totp T j :T stg VALUE 100 0.9 1 12 ± 20 850 1.13 -55 to +150 UNIT V A A A V mW W °C
*The power which can be dissipated assuming the device is mounted in a typica.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ZVN4310G |
Diodes |
100V N-CHANNEL MOSFET | |
2 | ZVN4310G |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
3 | ZVN4306A |
Diodes |
60V N-Channel MOSFET | |
4 | ZVN4306A |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
5 | ZVN4306AV |
Zetex Semiconductors |
N-Channel MOSFET | |
6 | ZVN4306G |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
7 | ZVN4306G |
Diodes |
60V N-Channel MOSFET | |
8 | ZVN4306GV |
Diodes |
N-Channel MOSFET | |
9 | ZVN4306GV |
Zetex Semiconductors |
N-Channel MOSFET | |
10 | ZVN4106F |
Diodes |
60V N-Channel MOSFET | |
11 | ZVN4206A |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
12 | ZVN4206AV |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |