N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – JUNE 94 FEATURES * 60 Volt VDS * RDS(on) = 1 Ω ZVN4206A D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb =25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb =25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P to.
* 60 Volt VDS
* RDS(on) = 1 Ω
ZVN4206A
D G S
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at T amb =25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb =25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg 60
E-LINE TO92 COMPATIBLE VALUE UNIT V mA A V W °C
600 8 ± 20 0.7 -55 to +150
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) St.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ZVN4206AV |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
2 | ZVN4206G |
Diodes |
N-Channel MOSFET | |
3 | ZVN4206G |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
4 | ZVN4206GV |
Zetex Semiconductors |
N-Channel MOSFET | |
5 | ZVN4210A |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
6 | ZVN4210G |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
7 | ZVN4106F |
Diodes |
60V N-Channel MOSFET | |
8 | ZVN4306A |
Diodes |
60V N-Channel MOSFET | |
9 | ZVN4306A |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
10 | ZVN4306AV |
Zetex Semiconductors |
N-Channel MOSFET | |
11 | ZVN4306G |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
12 | ZVN4306G |
Diodes |
60V N-Channel MOSFET |