SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – JANUARY 1996 FEATURES * RDS(on)= 5Ω * 60 Volt VDS COMPLEMENTARY TYPE PARTMARKING DETAIL ZVP3306F MC ZVN3306F S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb =25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb =25°C Operating .
* RDS(on)= 5Ω
* 60 Volt VDS COMPLEMENTARY TYPE PARTMARKING DETAIL ZVP3306F MC
ZVN3306F
S
D G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at T amb =25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb =25°C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 60 150 3 ± 20 330 -55 to +150
SOT23 UNIT V mA A V mW °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Curre.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | ZVN3306A |
Zetex Semiconductors |
N-Channel MOSFET | |
2 | ZVN3310A |
Zetex Semiconductors |
N-Channel MOSFET | |
3 | ZVN3310F |
Diodes |
N-Channel MOSFET | |
4 | ZVN3320F |
DIODES |
SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL MOSFET | |
5 | ZVN3320F |
Zetex Semiconductors |
N-Channel MOSFET | |
6 | ZVN0117TA |
ETC |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
7 | ZVN0120A |
ETC |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
8 | ZVN0124A |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
9 | ZVN0535A |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
10 | ZVN0540A |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
11 | ZVN0545A |
Zetex Semiconductors |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
12 | ZVN0545G |
DIODES |
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |