XP5553 - Panasonic Semiconductor

XP5553 Silicon NPN epitaxial planer transistor

Composite Transistors XP5553 Silicon NPN epitaxial planer transistor Unit: mm 0.425 1.25±0.1 0.425 0.2±0.05 For amplification of the low frequency 2.1±0.1 0.65 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 2.0±0.1 s Features 0.65 1 2 3 6 5 4 0.9±0.1 q 2SD1149 × 2 elements 0.7±0.1 .

Features

0.65 1 2 3 6 5 4 0.9±0.1 q 2SD1149 × 2 elements 0.7±0.1 0 to 0.1 0.2±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings 100 100 15 20 50 150 150
  –55 to +150 Unit V V V mA mA mW 1 : Emitter (Tr1) 2 : Base (Tr1) 3 : Base (Tr2) 4 : Collector (Tr2) 5 : Emitter (Tr2) 6 : Collector (Tr1) EIAJ : SC
  –88 S
  –Mini Type Package (6
  –pin) Mar.