XP5501 - Panasonic Semiconductor

XP5501 Silicon NPN epitaxial planer transistor

Composite Transistors XP5501 Silicon NPN epitaxial planer transistor Unit: mm 0.425 1.25±0.1 0.425 0.2±0.05 For general amplification 2.1±0.1 0.65 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 2.0±0.1 s Features 0.65 1 2 3 6 5 4 0.9±0.1 q 2SD601A × 2 elements 0.7±0.1 0 to 0.1 0..

Features

0.65 1 2 3 6 5 4 0.9±0.1 q 2SD601A × 2 elements 0.7±0.1 0 to 0.1 0.2±0.1 s Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of Emitter to base voltage element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings 60 50 7 100 200 150 150
  –55 to +150 Unit V V V mA mA mW 1 : Emitter (Tr1) 2 : Base (Tr1) 3 : Base (Tr2) 4 : Collector (Tr2) 5 : Emitter (Tr2) 6 : Collector (Tr1) EIAJ : SC
  –88 S
  –Mini Type Package (6
  –pin) Mark.