Composite Transistors XP2501 Silicon NPN epitaxial planer transistor Unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.2±0.05 0.12 – 0.02 +0.05 For general amplification 0.65 s Features q q Two elements incorporated into one package. (Base-coupled transistors) Reduction of the mounting area and assembly cost by one half. 2.0±0.1 1 2 3 5 0.65 4 0.9± 0.1 q .
q q
Two elements incorporated into one package. (Base-coupled transistors) Reduction of the mounting area and assembly cost by one half.
2.0±0.1
1 2 3
5
0.65
4
0.9± 0.1
q
2SD601A × 2 elements
0.7±0.1
s Basic Part Number of Element
0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg
(Ta=25˚C)
Ratings 60 50 7 100 200 150 150
–55 to +150 Unit V V .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | XP2 |
Lattice Semiconductor |
FPGA fabric | |
2 | XP2-17 |
Lattice Semiconductor |
FPGA fabric | |
3 | XP2-30 |
Lattice Semiconductor |
FPGA fabric | |
4 | XP2-40 |
Lattice Semiconductor |
FPGA fabric | |
5 | XP2-5 |
Lattice Semiconductor |
FPGA fabric | |
6 | XP2-8 |
Lattice Semiconductor |
FPGA fabric | |
7 | XP2020 |
Photonis |
Photomultiplier | |
8 | XP2020 |
Photonis |
photomultiplier tubes | |
9 | XP202A0003MR-G |
TOREX |
P-channel 4V(G-S) MOSFET | |
10 | XP202A0003PR-G |
Torex Semiconductor |
P-channel MOSFET | |
11 | XP2206 |
Photonis |
A tube | |
12 | XP2210 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor |