XP03383 - Panasonic Semiconductor

XP03383 Composite Transistor

Composite Transistors XP03383 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.2±0.05 0.12 – 0.02 +0.05 For switching/digital circuits 0.65 0.65 q 0.9± 0.1 s Basic Part Number of Element q 0.7±0.1 0.2 q Two elements incorporated into one package. (Transistors with b.

Features

1 2 3 5 4 UN1213+UN111F 1 : Emitter(Tr1) 2 : Base(Tr1) 3 : Emitter(Tr2) s Absolute Maximum Ratings Parameter Collector to base voltage Tr1 Collector to emitter voltage Collector current Collector to base voltage Tr2 Collector to emitter voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings 50 50 100
  –50
  –50
  –100 150 150
  –55 to +150 Unit V V mA V V mA mW ˚C ˚C Marking Symbol: DV Internal Connection 1 2 3 4 Tr1 5 0 to 0.1 0.2±0.1 4 : Collector(Tr2) 5 : Collector(Tr1) Base(Tr2) EIA.