Composite Transistors XP01504 (XP1504) Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output (0.425) 0.20±0.05 5 4 0.12+0.05 –0.02 1.25±0.10 2.1±0.1 G G Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half. 10° 1 2 3 (0.65) (0.6.
Unit V µA µA V V MHz
0.1 0.1 500 2500 0.1 0.6 80 7 1.0
pF Ω
Ron measuring circuit
VB
VV
VA
Ron=
VB ✕1000(Ω) VA
–VB
Note) The Part number in the Parenthesis shows conventional part number.
1
Composite Transistors
PT — Ta
500
XP01504
IC — VCE
24 Ta=25˚C
120 VCE=2V 100 25˚C
IC — VBE
Total power dissipation PT (mW)
Collector current IC (mA)
IB=10µA 16 8µA 12 6µA 4µA
Collector current IC (mA)
400
20
80
Ta=75˚C
300
– 25˚C 60
200
8
40
100
4
2µA
20
0 0 40 80 120 160
0 0 2 4 6 8 10 12
0 0 0.2 0.4 0.6 0.8 1.0
Ambient temperature Ta (˚C)
Collector to emitter voltage VCE.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | XP01531 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
2 | XP0111M |
Panasonic Semiconductor |
Silicon PNP Transistor | |
3 | XP01214 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
4 | XP0121E |
Panasonic Semiconductor |
Silicon NPN Transistor | |
5 | XP0121N |
Panasonic Semiconductor |
Silicon NPN Transistor | |
6 | XP01401 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
7 | XP02401 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
8 | XP02501 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
9 | XP03311 |
Panasonic Semiconductor |
Composite Transistor | |
10 | XP03312 |
Panasonic Semiconductor |
Composite Transistor | |
11 | XP03383 |
Panasonic Semiconductor |
Composite Transistor | |
12 | XP04111 |
Panasonic Semiconductor |
Silicon PNP Transistor |