XN4401 - Panasonic Semiconductor

XN4401 Silicon PNP epitaxial planer transistor

Composite Transistors XN4401 Silicon PNP epitaxial planer transistor Unit: mm For general amplification 0.65±0.15 6 0.95 2.8 –0.3 +0.2 +0.25 1.5 –0.05 0.65±0.15 1 0.3 –0.05 2.9 –0.05 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 5 2 0.95 4 3 q 2SB709A × 2 elements.

Features

0.5
  –0.05 +0.1 +0.1 1 Composite Transistors PT — Ta 500 XN4401 IC — VCE
  –60 Ta=25˚C IB=
  –300µA
  –250µA
  –40
  –200µA
  –30
  –150µA
  –60 VCE=
  –5V Ta=25˚C
  –50 IC — IB Total power dissipation PT (mW) Collector current IC (mA) Collector current IC (mA) 400
  –50
  –40 300
  –30 200
  –20
  –100µA
  –20 100
  –10
  –50µA
  –10 0 0 40 80 120 160 0 0
  –2
  –4
  –6
  –8
  –10
  –12
  –14
  –16
  –18 0 0
  –100
  –200
  –300
  –400 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base current IB (µA) IB — VBE
  –400
  –350 VCE=
  – 5V Ta=25˚C
  –200
  –240 IC — VBE
  –10 VCE(sat) — IC Collector to emitter saturation vo.