www.DataSheet4U.com Composite Transistors XN1215 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by.
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Composite Transistors
PT — Ta
500
XN1215
Total power dissipation PT (mW)
400
300
200
100
0 0 40 80 120 160
Ambient temperature Ta (˚C)
IC — VCE
160 100
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
IC/IB=10
hFE — IC
400 VCE=10V
30 10 3 1 0.3 0.1 0.03 0.01 0.1 25˚C
Forward current transfer ratio hFE
140
IB=1.0mA 0.9mA 0.8mA
Ta=25˚C
350 300 250 200 25˚C 150 100 50 0
–25˚C Ta=75˚C
Collector current IC (mA)
120 100 80
0.7mA 0.6mA 0.5mA 0.4mA 0.3mA
60 0.2mA 40 20 0 0 2 4 6 8 10 12 0.1mA
Ta=75˚C
–25˚C
0.3
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | XN01210 |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type | |
2 | XN01211 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor | |
3 | XN01212 |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type | |
4 | XN0121E |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type | |
5 | XN01110 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor | |
6 | XN01112 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type For switching/digital circuits | |
7 | XN01114 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor | |
8 | XN01119 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor | |
9 | XN01401 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor | |
10 | XN01501 |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type | |
11 | XN01504 |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type | |
12 | XN01558 |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type |