www.DataSheet4U.com Composite Transistors XN1110 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by.
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Composite Transistors
PT — Ta
500
XN1110
Total power dissipation PT (mW)
400
300
200
100
0 0 40 80 120 160
Ambient temperature Ta (˚C)
IC — VCE
–120
–100
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
IC/IB=10 400
hFE — IC
VCE=
–10V
–30
–10
–3
–1 Ta=75˚C
–0.3
–0.1
–0.03
–25˚C 25˚C
Forward current transfer ratio hFE
Collector current IC (mA)
Ta=25˚C IB=
–1.0mA
–0.9mA
–100
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–80
–0.4mA
–0.3mA
–60
–0.2mA
–40
–0.1mA
–20
300 Ta=75˚C
200
25˚C
–25˚C
100
0 0
–2
–4
–6
–8
–10
–12
–0.01
–0.1
–0.3.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | XN01112 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type For switching/digital circuits | |
2 | XN01114 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor | |
3 | XN01119 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor | |
4 | XN01210 |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type | |
5 | XN01211 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor | |
6 | XN01212 |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type | |
7 | XN01215 |
Panasonic Semiconductor |
Silicon NPN epitaxial planer transistor | |
8 | XN0121E |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type | |
9 | XN01401 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer transistor | |
10 | XN01501 |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type | |
11 | XN01504 |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type | |
12 | XN01558 |
Panasonic Semiconductor |
Silicon NPN epitaxial planar type |