WT-2306 Surface Mount N-Channel Enhancement Mode MOSFET 1 3 DRAIN DRAIN CURRENT 2.8 AMPERES DRAIN SOURCE V OLTAGE 20 VOLTAGE 2 SOURCE Features: *Super high dense cell design for low R DS(ON) R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V *Rugged and Reliable *SOT-23 Package GATE 3 1 2 SOT-23 www.DataSheet4U.com Maximum Ratings (TA=25 C Unless O.
*Super high dense cell design for low R DS(ON) R DS(ON) <70 mΩ @VGS =4.0V R DS(ON) <95 mΩ @VGS =2.5V
*Rugged and Reliable
*SOT-23 Package
GATE
3 1 2
SOT-23
www.DataSheet4U.com
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =125 C) (1) Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD R θ JA TJ, Tstg Value 20 Unite V V A A A W C/W C
+8 2.8 12 1.25 1.25 100 -55 to 150
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | WT-2300 |
Weitron Technology |
Surface Mount N-Channel Enhancement Mode MOSFET | |
2 | WT-2301 |
Weitron Technology |
Surface Mount P-Channel Enhancement Mode MOSFET | |
3 | WT-2307 |
Weitron Technology |
Surface Mount P-Channel Enhancement Mode MOSFET | |
4 | WT-3401 |
Weitron Technology |
Surface Mount P-Channel Enhancement Mode MOSFET | |
5 | WT-3402 |
Weitron Technology |
Surface Mount N-Channel Enhancement Mode MOSFET | |
6 | WT-A521 |
Fujitsu |
(WT-A521 / WT-A522) UHF RFID Tag | |
7 | WT-A522 |
Fujitsu |
(WT-A521 / WT-A522) UHF RFID Tag | |
8 | WT-H-154D240I-CTP |
WillTron |
TFT LCD | |
9 | WT-H-B24M36-4L03G |
WillTron |
TFT LCD | |
10 | WT-H-P156E30-48L01P |
WillTron |
TFT LCD | |
11 | WT-H-T154D320IV02 |
WillTron |
TFT LCD | |
12 | WT-Z106N-AU4 |
Weitron Technology |
Zener Diode Chips |