WT-2300 - Weitron Technology

WT-2300 Surface Mount N-Channel Enhancement Mode MOSFET

WT-2300 Surface Mount N-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT 3.8 AMPERES 1 Features: *Super high dense cell design for low RDS(ON) R DS(ON) <40 mΩ @VGS =4.5V R DS(ON) <60 mΩ @VGS =2.5V R DS(ON) <75 mΩ @VGS =1.8V *Rugged and Reliable *SOT-23 Package DRAIN SOURCE VOLTAGE 20 VOLTAGE 2 SOURCE GATE 3 1 2 SOT-23 www.DataSheet4U.com Maximum.

Features

*Super high dense cell design for low RDS(ON) R DS(ON) <40 mΩ @VGS =4.5V R DS(ON) <60 mΩ @VGS =2.5V R DS(ON) <75 mΩ @VGS =1.8V
*Rugged and Reliable
*SOT-23 Package DRAIN SOURCE VOLTAGE 20 VOLTAGE 2 SOURCE GATE 3 1 2 SOT-23 www.DataSheet4U.com Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =125 C) (1) Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD R θ JA TJ, Tstg V.