Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
I/O0-31 A0-18 WE1-4 CS1-4 I/O29 I/O28 A0 A1 Data Inputs/Outputs Address Inputs Write Enables Chip Selects Output Enable Power Supply Ground Not Connected OE VCC GND NC BLOCK DIAGRAM A2 WE1 CS 1 WE2 CS2 WE3 CS 3 WE 4CS4 I/O23 I/O22 OE A0-18 512K x 8 512K x 8 512K x 8 512K x 8 I/O21 I/O20 66 I/O0-7 I/O8-15 I/O16-23 I/O24-31 8 8 8 8 February 1998 1 W.
s Access Times of 15†, 17, 20ns s MIL-STD-883 Compliant Devices Available s Low Voltage Operation s Packaging
• 66-pin, PGA Type, 1.385 inch square Hermetic Ceramic HIP (Package 402)
• 68 lead, Hermetic CQFP (G2), 22mm (0.880 inch) square (Package 500). Designed to fit JEDEC 68 lead 0.990" CQFJ footprint s Organized as 512Kx32; User Configurable as 1Mx16 or 2Mx8 s Radiation Tolerant with Epitaxial Layer Die s s s s s Commercial, Industrial and Military Temperature Ranges 3.3 Volt Power Supply BiCMOS TTL Compatible Inputs and Outputs Built-in Decoupling Caps and Multiple Ground Pins for Low Noi.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | WS512K32BV |
ETC |
512Kx32 3.3V SRAM MODULE |
|
| 2 | WS512K32 |
ETC |
512K X 32 SRAM MODULE SMD 5962-94611 |
|
| 3 | WS512K32-XXX |
ETC |
512K X 32 SRAM MODULE SMD 5962-94611 |
|
| 4 | WS512K32V |
ETC |
512K x 32 SRAM 3.3V MODULE |
|
| 5 | WS512K32V-XXX |
ETC |
512Kx32 SRAM 3.3V MODULE |
|
| 6 | WS512K16-xxx |
White Electronic Designs Corporation |
512Kx16 SRAM MODULE |
|
| 7 | WS512K8 |
ETC |
512Kx8 SRAM MODULE |
|
| 8 | WS512K8-XCX |
ETC |
512Kx8 SRAM MODULE |
|
| 9 | WS51P4SMA |
WAYON |
Power Transient Voltage Suppressor |
|
| 10 | WS51P4SMA-B |
WAYON |
Power Transient Voltage Suppressor |
|
| 11 | WS5.0P4SMA |
WAYON |
Power Transient Voltage Suppressor |
|
| 12 | WS5.0P4SMA-B |
WAYON |
Power Transient Voltage Suppressor |
|