The WS27C256L is a performance oriented 256K UV Erasable Electrically Programmable Read Only Memory organized as 32K words x 8 bits/word. It is manufactured using an advanced CMOS technology which enables it to operate at speeds up to 120 nsecs. The memory was designed utilizing WSI's patented self-aligned split gate EPROM cell, resulting in a low power devi.
• High Performance CMOS
— 120 ns Access Time
• Ceramic Leadless Chip Carrier (CLLCC)
• EPI Processing
— Latch-Up Immunity to 200 mA — ESD Protection Exceeds 2000 Volts
• Fast Programming
• DESC SMD No. 5962-86063
• 300 Mil DIP or Standard 600 Mil DIP
• JEDEC Standard Pin Configuration
GENERAL DESCRIPTION
The WS27C256L is a performance oriented 256K UV Erasable Electrically Programmable Read Only Memory organized as 32K words x 8 bits/word. It is manufactured using an advanced CMOS technology which enables it to operate at speeds up to 120 nsecs. The memory was designed utilizing WSI's pat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | WS27C256L-12 |
STMicroelectronics |
Military 32K x 8 CMOS EPROM | |
2 | WS27C256L-12CMB |
STMicroelectronics |
Military 32K x 8 CMOS EPROM | |
3 | WS27C256L-12DMB |
STMicroelectronics |
Military 32K x 8 CMOS EPROM | |
4 | WS27C256L-15 |
STMicroelectronics |
Military 32K x 8 CMOS EPROM | |
5 | WS27C256L-15DMB |
STMicroelectronics |
Military 32K x 8 CMOS EPROM | |
6 | WS27C256L-15TMB |
STMicroelectronics |
Military 32K x 8 CMOS EPROM | |
7 | WS27C256L-20 |
STMicroelectronics |
Military 32K x 8 CMOS EPROM | |
8 | WS27C256L-20DMB |
STMicroelectronics |
Military 32K x 8 CMOS EPROM | |
9 | WS27C256L |
STMicroelectronics |
Military 32K x 8 CMOS EPROM | |
10 | WS27C010L |
STMicroelectronics |
Military 128K x 8 CMOS EPROM | |
11 | WS27C010L-12CMB |
STMicroelectronics |
Military 128K x 8 CMOS EPROM | |
12 | WS27C010L-12DMB |
STMicroelectronics |
Military 128K x 8 CMOS EPROM |