This Power MOSFET is produced using Winsemi’s advanced MOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for Load/Power Management for Portables and Computing, Charging Circuits and Battery Protection G S D SOT-23 Marking: .
■ -3.2A, -20V, RDS(on)(Max 130mΩ)@VGS=-4.5V
■ −1.8 V Rated for Low Voltage Gate Drive
■ SOT-23 Surface Mount for Small Footprint
■ Single Pulse Avalanche Energy Rated
General Description
This Power MOSFET is produced using Winsemi’s advanced MOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for Load/Power Management for Portables and Computing, Charging Circuits and Battery Protection
G S
D
SOT-23
Marking: H03F
Absolute Maximum Ratings
Symbol
VDSS ID Drain .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | WFY3N02 |
WINSEMI SEMICONDUCTOR |
20V N-Channel MOSFET | |
2 | WFY4101 |
WINSEMI SEMICONDUCTOR |
Trench Power MOSFET | |
3 | WF-0005 |
Microlab |
Finned Dummy Loads | |
4 | WF-0025 |
Microlab |
Finned Dummy Loads | |
5 | WF-0035 |
Microlab |
Finned Dummy Loads | |
6 | WF-0045 |
Microlab |
Finned Dummy Loads | |
7 | WF-0050 |
Microlab |
Finned Dummy Loads | |
8 | WF-0055 |
Microlab |
Finned Dummy Loads | |
9 | WF-0065 |
Microlab |
Finned Dummy Loads | |
10 | WF-0075 |
Microlab |
Finned Dummy Loads | |
11 | WF-0085 |
Microlab |
Finned Dummy Loads | |
12 | WF100 |
Xpiq |
DC/DC Converters |