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WFY3P02 |
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| Part Number | WFY3P02 |
| Manufacturer | WINSEMI SEMICONDUCTOR |
| Description | This Power MOSFET is produced using Winsemi’s advanced MOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics... |
| Features |
■ -3.2A, -20V, RDS(on)(Max 130mΩ)@VGS=-4.5V ■ −1.8 V Rated for Low Voltage Gate Drive ■ SOT-23 Surface Mount for Small Footprint ■ Single Pulse Avalanche Energy Rated General Description This Power MOSFET is produced using Winsemi’s advanced MOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for Load/Power Management for Portables and Computing, Charging Circuits and Battery Protection G S D SOT-23 Marking: H03F Absolute Maximum Ratings Symbol VDSS ID Drain ... |
| Document |
 WFY3P02 Data Sheet
PDF 268.57KB |
| Distributor | Stock | Price | Buy |
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