Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charg.
s tg Tj March 1999 Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
o o
Value 900 900 ± 30 5.6 3.3 22.4 160 1.28 4 -65 to 150 150
( 1) ISD ≤ 5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it V V V A A A W W /o C V/ns
o o
C C 1/8
(
•) Pulse width limited by safe operating area
STW5NB90
THERMAL DAT.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | W5NB100 |
STMicroelectronics |
STW5NB100 | |
2 | W5NA100 |
STMicroelectronics |
STW5NA100 | |
3 | W5NA90 |
STMicroelectronics |
STW5NA90 | |
4 | W5NK100Z |
STMicroelectronics |
STW5NK100Z | |
5 | W503GDT |
Kingbright Electronic |
LED Lamp | |
6 | W503HDT |
Kingbright Electronic |
LED Lamp | |
7 | W503IDT |
Kingbright Electronic |
LED Lamp | |
8 | W503YDT |
Kingbright Electronic |
LED Lamp | |
9 | W5092ZC240 |
IXYS |
Rectifier Diode | |
10 | W5092ZC260 |
IXYS |
Rectifier Diode | |
11 | W5092ZC280 |
IXYS |
Rectifier Diode | |
12 | W5092ZC300 |
IXYS |
Rectifier Diode |