W5NA100 - STMicroelectronics

W5NA100 STW5NA100

STW5NA100 STH5NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE STW5NA100 STH5NA100FI www.DataSheet4U.com s s s s s s V DSS 1000 V 1000 V R DS(on) < 3.5 Ω < 3.5 Ω ID 4.6 A 2.9 A TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100 oC GATE CHARGE MINIMISED REDUCED.

Features

and Voltage (DC) Storage Temperature Max. Operating Junction Temperature o Unit STH5NA100FI V V V 2.9 1.8 18.4 60 0.48 4000 A A A W W/ o C V o o 1000 1000 ± 30 4.6 2.9 18.4 150 1.2  -65 to 150 150 C C 1/6 (
•) Pulse width limited by safe operating area October 1997 STW5NA100-STH5NA100FI THERMAL DATA TO-247 R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Max 0.83 30 0.1 300 ISOWATT218 2.1 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS www.DataShe.