These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFET.
Order codes VDSS
RDS(on) max
RDS(on)
*Qg
ID
STB11NM80 STF11NM80 STI11NM80 800 V STP11NM80 STW11NM80
< 0.40 Ω
14Ω
*nC
11 A
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Best RDS(on)
*Qg in the industry
Applications
■ Switching applications
Description
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's prop.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | W11NB80 |
STMicroelectronics |
STW11NB80 | |
2 | W11NK100Z |
STMicroelectronics |
STW11NK100Z | |
3 | W11NK90Z |
STMicroelectronics |
STW11NK90Z | |
4 | W1185LC300 |
IXYS |
Rectifier Diode | |
5 | W1185LC380 |
IXYS |
Rectifier Diode | |
6 | W1185LC450 |
IXYS |
Rectifier Diode | |
7 | W1-07311APA-G0 |
Power Systems GmbH |
TOUCH SCREEN | |
8 | W10 |
Semitel |
Glass Passivated Single-Phase Bridge Rectifiers | |
9 | W10 |
GULF SEMI |
SINGLE PHASE SILICON BRIDGE RECTIFIER | |
10 | W10 |
Leshan Radio Company |
1.5A WOM BRIDGE RECTIFIERS | |
11 | W10 |
GOOD-ARK Electronics |
SINGLE-PHASE SILICON BRIDGE | |
12 | W10 |
Semtech Corporation |
1.5A SINGLE - PHASE SILICON BRIDGE |