W11NM80 |
Part Number | W11NM80 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. The... |
Features |
Order codes VDSS
RDS(on) max
RDS(on)*Qg
ID
STB11NM80 STF11NM80 STI11NM80 800 V STP11NM80 STW11NM80
< 0.40 Ω
14Ω*nC
11 A
■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on)*Qg in the industry Applications ■ Switching applications Description These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's prop... |
Document |
W11NM80 Data Sheet
PDF 476.91KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | W11NB80 |
STMicroelectronics |
STW11NB80 | |
2 | W11NK100Z |
STMicroelectronics |
STW11NK100Z | |
3 | W11NK90Z |
STMicroelectronics |
STW11NK90Z | |
4 | W1185LC300 |
IXYS |
Rectifier Diode | |
5 | W1185LC380 |
IXYS |
Rectifier Diode |