The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS s SINGLE-END.
OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/8 STW10NC70Z Safe Operating Area Thermal Impedance Output Characteristics Transfer Characteristics Transcon.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | W10NC60 |
ST Microelectronics |
STW10NC60 | |
2 | W10NK60Z |
STMicroelectronics |
N-channel Power MOSFET | |
3 | W10NK807 |
ST Microelectronics |
STW10NK807 | |
4 | W10NK80Z |
ST Microelectronics |
STW10NK80Z | |
5 | W10 |
Semitel |
Glass Passivated Single-Phase Bridge Rectifiers | |
6 | W10 |
GULF SEMI |
SINGLE PHASE SILICON BRIDGE RECTIFIER | |
7 | W10 |
Leshan Radio Company |
1.5A WOM BRIDGE RECTIFIERS | |
8 | W10 |
GOOD-ARK Electronics |
SINGLE-PHASE SILICON BRIDGE | |
9 | W10 |
Semtech Corporation |
1.5A SINGLE - PHASE SILICON BRIDGE | |
10 | W10 |
Shanghai Sunrise Electronics |
SINGLE PHASE SILICON BRIDGE RECTIFIER | |
11 | W10 |
EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIERS | |
12 | W10 |
Surge Components |
Single Phase 1.5 AMPS. Silicon Bridge Rectifiers |