The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERT.
(RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature 10 6.3 40 160 1.28
Value STW10NC60 600 600 ±30 10 (
*) 6.3 (
*) 40 (
*) 60 0.48 3.5 2500
– 55 to 150
(1)ISD ≤ 10A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX (
*) Limited only by Maximum Temperature Allowed
Unit V V V A A A W W/°C V/ns V °C
STH10NC60FI
(
•)Pulse width limited by safe opera.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | W10NC70Z |
ST Microelectronics |
STW10NC70Z | |
2 | W10NK60Z |
STMicroelectronics |
N-channel Power MOSFET | |
3 | W10NK807 |
ST Microelectronics |
STW10NK807 | |
4 | W10NK80Z |
ST Microelectronics |
STW10NK80Z | |
5 | W10 |
Semitel |
Glass Passivated Single-Phase Bridge Rectifiers | |
6 | W10 |
GULF SEMI |
SINGLE PHASE SILICON BRIDGE RECTIFIER | |
7 | W10 |
Leshan Radio Company |
1.5A WOM BRIDGE RECTIFIERS | |
8 | W10 |
GOOD-ARK Electronics |
SINGLE-PHASE SILICON BRIDGE | |
9 | W10 |
Semtech Corporation |
1.5A SINGLE - PHASE SILICON BRIDGE | |
10 | W10 |
Shanghai Sunrise Electronics |
SINGLE PHASE SILICON BRIDGE RECTIFIER | |
11 | W10 |
EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIERS | |
12 | W10 |
Surge Components |
Single Phase 1.5 AMPS. Silicon Bridge Rectifiers |