VSP007N10MS-G - Vanguard Semiconductor

VSP007N10MS-G N-Channel Advanced Power MOSFET

Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Ⅱ Technology  100% Avalanche test  Pb-free lead plating; RoHS compliant VSP007N10MS-G 100V/85A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID 100 V 5.7 mΩ 7.5 mΩ 85 A PDFN5x6 Part ID VSP007N10MS-G Package Type PDFN5x6 Marking .

Features

 Enhancement mode
 Low on-resistance RDS(on) @ VGS=4.5 V
 VitoMOS® Ⅱ Technology
 100% Avalanche test
 Pb-free lead plating; RoHS compliant VSP007N10MS-G 100V/85A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID 100 V 5.7 mΩ 7.5 mΩ 85 A PDFN5x6 Part ID VSP007N10MS-G Package Type PDFN5x6 Marking 007N10M Tape and reel information 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current ID Continuous drai.