VSO040N04MD 40V/6A Dual N-Channel Advanced Power MOSFET Features Dual N-Channel Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching High Effective Pb-free lead plating; RoHS compliant; Hg-Free V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 40 32 38 6 SOP8 V mΩ mΩ A Part ID VSO040N04MD Package Type SOP8 Marki.
Dual N-Channel
Enhancement mode
Very low on-resistance RDS(on) @ VGS=4.5 V
Fast Switching
High Effective
Pb-free lead plating; RoHS compliant; Hg-Free
V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID
40 32 38 6
SOP8
V mΩ mΩ A
Part ID VSO040N04MD
Package Type SOP8
Marking 040N04MD
Tape and reel information 3000pcs/reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM Pulse drain current tested ① PD Maximum power dissipatio.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VSO040N04MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
2 | VSO045N06MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
3 | VSO004P03MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
4 | VSO005N06MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
5 | VSO006N04MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
6 | VSO006P03MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
7 | VSO007N04MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
8 | VSO007N06MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
9 | VSO007N07MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
10 | VSO008N03MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
11 | VSO008N06MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
12 | VSO008N10MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET |