Features N-Channel,5V Logic Level Control Enhancement mode Low on-resistance RDS(on) @ VGS=4.5 V Fast Switching Pb-free lead plating; RoHS compliant VSO026N04MS 40V/10A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5V ID 40 V 22 mΩ 26.5 mΩ 10 A SOP8 Part ID VSO026N04MS Package Type SOP8 Marking 026N04M Tape.
N-Channel,5V Logic Level Control
Enhancement mode
Low on-resistance RDS(on) @ VGS=4.5 V
Fast Switching
Pb-free lead plating; RoHS compliant
VSO026N04MS
40V/10A N-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5V ID
40 V 22 mΩ 26.5 mΩ 10 A
SOP8
Part ID VSO026N04MS
Package Type SOP8
Marking 026N04M
Tape and reel information
3000pcs/Reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM Pulse drain curr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VSO026N04MD |
Vanguard Semiconductor |
Dual N-Channel Advanced Power MOSFET | |
2 | VSO025C03MC |
Vanguard Semiconductor |
N+P-Channel Advanced Power MOSFET | |
3 | VSO025N10MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
4 | VSO025NE5MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
5 | VSO004P03MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
6 | VSO005N06MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
7 | VSO006N04MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
8 | VSO006P03MS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
9 | VSO007N04MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
10 | VSO007N06MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
11 | VSO007N07MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
12 | VSO008N03MS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET |