VS3506AE - Vanguard Semiconductor

VS3506AE P-Channel Advanced Power MOSFET

Features  P-Channel，-5V Logic Level Control  Low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  Enhancement mode  Pb-free lead plating; RoHS compliant VS3506AE -30V/-60A P-Channel Advanced Power MOSFET V DS -30 V R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5V 6 mΩ 10 mΩ I D -60 A PDFN3333 Part ID VS3506AE Package Type PDFN3333 Marking 350.

Features

 P-Channel，-5V Logic Level Control
 Low on-resistance RDS(on) @ VGS=-4.5 V
 Fast Switching
 Enhancement mode
 Pb-free lead plating; RoHS compliant VS3506AE -30V/-60A P-Channel Advanced Power MOSFET V DS -30 V R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5V 6 mΩ 10 mΩ I D -60 A PDFN3333 Part ID VS3506AE Package Type PDFN3333 Marking 3506AE Tape and reel information 5000pcs/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage VGS Gate-Source voltage IS Diode continuous forward current ID Continuous drain curren.