Features P-Channel,-5V Logic Level Control Enhancement mode Low on-resistance RDS(on) @ VGS=-4.5 V Fast Switching and High efficiency 100% Avalanche Tested Pb-free lead plating; RoHS compliant VS3503AT -30V/-160A P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5V ID -30 V 3.7 mΩ 5.6 mΩ -160 A TO-220AB Part I.
P-Channel,-5V Logic Level Control
Enhancement mode
Low on-resistance RDS(on) @ VGS=-4.5 V
Fast Switching and High efficiency
100% Avalanche Tested
Pb-free lead plating; RoHS compliant
VS3503AT
-30V/-160A P-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.5V ID
-30 V 3.7 mΩ 5.6 mΩ -160 A
TO-220AB
Part ID VS3503AT
Package Type TO-220AB
Marking 3503AT
Tape and reel information 50pcs/Tube
Maximum ratings, at T A =25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
VGS
IS
Drain-Source breakdown voltage Gate-Source voltage Diode continu.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VS3503AD |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
2 | VS3503AP |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
3 | VS3504AD |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
4 | VS3504AP |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
5 | VS3504AS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
6 | VS3506AD |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
7 | VS3506AE |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
8 | VS3506AP |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
9 | VS3506AS |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
10 | VS3506AT |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
11 | VS3506ATD |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
12 | VS3508AE |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET |