Features N-Channel,2.5V logic level control Enhancement mode Low on-resistance RDS(on) @ VGS=2.5 V Fast Switching and High efficiency Pb-free lead plating; RoHS compliant VS2622AE 20V/56A N-Channel Advanced Power MOSFET V DS 20 V R @DS(on),TYP VGS=10V R @DS(on),TYP VGS=4.5V 4.8 mΩ 5.6 mΩ I D 56 A PDFN3333 Part ID VS2622AE Package Type PDFN3.
N-Channel,2.5V logic level control
Enhancement mode
Low on-resistance RDS(on) @ VGS=2.5 V
Fast Switching and High efficiency
Pb-free lead plating; RoHS compliant
VS2622AE
20V/56A N-Channel Advanced Power MOSFET
V DS
20 V
R @DS(on),TYP VGS=10V R @DS(on),TYP VGS=4.5V
4.8 mΩ 5.6 mΩ
I D 56 A PDFN3333
Part ID VS2622AE
Package Type PDFN3333
Marking 2622AE
Tape and reel information
5000pcs/Reel
Maximum ratings, at T A=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS Drain-Source breakdown voltage
VGS Gate-Source voltage
IS Diode continuous forward current ID Contin.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VS2622AA |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
2 | VS2622AL |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
3 | VS20VUA1LAMTF |
ROHM |
Transient Voltage Suppressor | |
4 | VS2301BC |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
5 | VS2301BC-A |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
6 | VS2302AT |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
7 | VS232 |
Vossel |
Dual High Performance RS232 Line Drivers / Receivers | |
8 | VS23S010C |
VLSI |
1 Megabit SPI SRAM | |
9 | VS23S010C-S |
VLSI |
1 Megabit SPI SRAM | |
10 | VS2508AE |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET | |
11 | VS2518AS |
Vanguard Semiconductor |
N-Channel Advanced Power MOSFET | |
12 | VS2522AL |
Vanguard Semiconductor |
P-Channel Advanced Power MOSFET |