VS2302AT - Vanguard Semiconductor

VS2302AT N-Channel Advanced Power MOSFET

VS2302AT designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable device for variety of DC-DC applications. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings.

Features

♦Ron(typ.)=30 mΩ @VGS=4.5V ♦Low On-Resistance ♦150°C Operating Temperature ♦Fast Switching ♦Lead-Free, RoHS Compliant VS2302AT 20V/3.2A N-Channel Advanced Power MOSFET Description VS2302AT designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable device for variety of DC-DC applications. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stre.