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www.vishay.com VS-GB200TS60NPbF Vishay Semiconductors INT-A-PAK "Half-Bridge" (Ultrafast Speed IGBT), 209 A INT-A-PAK PRODUCT SUMMARY VCES 600 V IC DC 209 A VCE(on) at 200 A, 25 °C 2.6 V Package INT-A-PAK Circuit Half Bridge with SMD Gate Resistor FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switch.
• Generation 5 Non Punch Through (NPT)
technology
• Ultrafast: Optimized for hard switching speed
8 kHz to 60 kHz
• Low VCE(on)
• 10 μs short circuit capability
• Square RBSOA
• Positive VCE(on) temperature coefficient
• HEXFRED® antiparallel diode with ultrasoft reverse
recovery characteristics
• Industry standard package
• Al2O3 DBC
• UL approved file E78996
• Designed for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Benchmark efficiency for UPS and welding application
• Rugged transient performance
• Direct mounting.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | VS-GB200TH120N |
Vishay |
Molding Type Module IGBT |
|
| 2 | VS-GB200TH120U |
Vishay |
Molding Type Module IGBT |
|
| 3 | VS-GB100NH120N |
Vishay |
Molding Type Module IGBT |
|
| 4 | VS-GB100TH120N |
Vishay |
Molding Type Module IGBT |
|
| 5 | VS-GB100TH120U |
Vishay |
Molding Type Module IGBT |
|
| 6 | VS-GB100TP120N |
Vishay |
Molding Type Module IGBT |
|
| 7 | VS-GB100TP120U |
Vishay |
Molding Type Module IGBT |
|
| 8 | VS-GB100TS60NPbF |
Vishay |
Ultrafast Speed IGBT |
|
| 9 | VS-GB100YG120NT |
Vishay |
IGBT ECONO3 Module |
|
| 10 | VS-GB150TH120N |
Vishay |
Molding Type Module IGBT |
|
| 11 | VS-GB150TS60NPbF |
Vishay |
Ultrafast Speed IGBT |
|
| 12 | VS-GB150YG120NT |
Vishay |
IGBT ECONO3 Module |
|