Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as general inverters and UPS. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Collector to emitter voltage VCES Gate to emitter voltage VGES Collector current Pulsed col.
• High short circuit capability, self limiting to 6 x IC
• 10 μs short circuit capability
• VCE(on) with positive temperature coefficient
• Maximum junction temperature 150 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
VCES
IC at TC = 80 °C VCE(on) (typical) at IC = 100 A, 25 °C
Package
Circuit
1200 V 100 A 1.80 V INT-A-PAK Half Bridge
TYPICAL APPLICATIONS
• AC inverter drives
• Swit.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VS-GB100TP120U |
Vishay |
Molding Type Module IGBT | |
2 | VS-GB100TH120N |
Vishay |
Molding Type Module IGBT | |
3 | VS-GB100TH120U |
Vishay |
Molding Type Module IGBT | |
4 | VS-GB100TS60NPbF |
Vishay |
Ultrafast Speed IGBT | |
5 | VS-GB100NH120N |
Vishay |
Molding Type Module IGBT | |
6 | VS-GB100YG120NT |
Vishay |
IGBT ECONO3 Module | |
7 | VS-GB150TH120N |
Vishay |
Molding Type Module IGBT | |
8 | VS-GB150TS60NPbF |
Vishay |
Ultrafast Speed IGBT | |
9 | VS-GB150YG120NT |
Vishay |
IGBT ECONO3 Module | |
10 | VS-GB200TH120N |
Vishay |
Molding Type Module IGBT | |
11 | VS-GB200TH120U |
Vishay |
Molding Type Module IGBT | |
12 | VS-GB200TS60NPbF |
Vishay |
Ultrafast Speed IGBT |