High current density power MOSFETs are paralleled into a compact, high power module providing the best combination of switching, ruggedized design, very low on-resistance and cost effectiveness. The isolated SOT-227 package is preferred for all commercial-industrial applications at power dissipation levels to approximately higher than 500 W. The low thermal .
• Fully isolated package
• Very low on-resistance
• Fully avalanche rated
• Dynamic dV/dt rating
• Low drain to case capacitance
• Low internal inductance
• Optimized for SMPS applications
SOT-227
• Easy to use and parallel
• Industry standard outline
• Designed and qualified for industrial level
• UL approved file E78996
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
100 V 190 A 0.0065 Modules - MOSFET SOT-227
PRODUCT SUMMARY
VDSS ID DC RDS(on) Type Package
DESCRIPTION
High current density power MOSFETs are paralleled into a compact, high pow.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VS-FC270SA20 |
Vishay |
Power Module / Single Switch - Power MOSFET | |
2 | VS-FC420SA10 |
Vishay |
Power MOSFET | |
3 | VS-FC420SA15 |
Vishay |
Power Module / Single Switch - Power MOSFET | |
4 | VS-FCSP0530ETR |
Vishay |
Schottky diode | |
5 | VS-FCSP05H40ETR |
Vishay |
Schottky diode | |
6 | VS-FCSP05H40TR |
Vishay |
Schottky diode | |
7 | VS-100BGQ015 |
Vishay |
Schottky Rectifier | |
8 | VS-100BGQ030 |
Vishay |
Schottky Rectifier | |
9 | VS-100BGQ045HF4 |
Vishay |
Schottky Rectifier | |
10 | VS-100BGQ100 |
Vishay |
Schottky Rectifier | |
11 | VS-100BGQ100HF4 |
Vishay |
High Performance Schottky Rectifier | |
12 | VS-100M |
Fujitsu |
POWER RELAY |