"§upertexinc. VP06E P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss I BVOGS -450V -500V ROS(ON) (max) 200 200 IO(ON) (min) -0.2A -0.2A TO-39 VP0645N2 VP0650N2 Order Number I Package TO-92 TO-22O VP0645N3 VP0645N5 VP0650N3 VP0650N5 DICE VP0645ND VP0650ND Features o Freedom from secondary breakdown o Low power dri.
o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coeffic.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VP0610L |
Vishay Siliconix |
P-Channel 60-V (D-S) MOSFET | |
2 | VP0610T |
Vishay Siliconix |
P-Channel 60-V (D-S) MOSFET | |
3 | VP0645 |
Supertex |
(VP0645 / VP0650) P-Channel Enhancement Mode Vertical DMOS FETs | |
4 | VP0650 |
Supertex |
(VP0645 / VP0650) P-Channel Enhancement Mode Vertical DMOS FETs | |
5 | VP06D |
Supertex |
P-Channel Enhancement-Mode Vertical DMOS FETs | |
6 | VP0104 |
Supertex Inc |
P-Channel Vertical DMOS FETs | |
7 | VP0104N6 |
Supertex |
P-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array | |
8 | VP0104N7 |
Supertex |
P-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array | |
9 | VP0106 |
Microchip |
P-Channel Vertical DMOS FET | |
10 | VP0106 |
Supertex Inc |
P-Channel Enhancement-Mode Vertical DMOS FETs | |
11 | VP0106N6 |
Supertex |
P-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array | |
12 | VP0106N7 |
Supertex |
P-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array |