VP0106 - Microchip

VP0106 P-Channel Vertical DMOS FET

The VP0106 low-threshold Enhancement-mode (normally-off) transistors use a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all.

Features

• Free from Secondary Breakdown
• Low Power Drive Requirement
• Ease of Paralleling
• Low CISS and Fast Switching Speeds
• Excellent Thermal Stability
• Integral Source-Drain Diode
• High Input Impedance and High Gain Applications
• Motor Controls
• Converters
• Amplifiers
• Switches
• Power Supply Circuits
• Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) General Description The VP0106 low-threshold Enhancement-mode (normally-off) transistors use a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produce.