This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS s.
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► Free from secondary breakdown
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► Low power drive requirement
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► Ease of paralleling
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► Low CISS and fast switching speeds
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► Excellent thermal stability
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► Integral source-drain diode
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► High input impedance and high gain
Applications
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► Motor controls
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► Converters
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► Amplifiers
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► Switches
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► Power supply circuits
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► Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
General Description
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VP0104 |
Supertex Inc |
P-Channel Vertical DMOS FETs | |
2 | VP0104N6 |
Supertex |
P-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array | |
3 | VP0104N7 |
Supertex |
P-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array | |
4 | VP0106 |
Microchip |
P-Channel Vertical DMOS FET | |
5 | VP0106 |
Supertex Inc |
P-Channel Enhancement-Mode Vertical DMOS FETs | |
6 | VP0106N6 |
Supertex |
P-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array | |
7 | VP0106N7 |
Supertex |
P-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array | |
8 | VP01A |
Supertex |
P-Channel Enhancement-Mode Vertical DMOS Power FETs | |
9 | VP01C |
Supertex |
P-Channel Enhancement-Mode Vertical DMOS FETs | |
10 | VP0204N2 |
Supertex Inc |
P-Channel Enhancement-Mode Vertical DMOS Power FETs | |
11 | VP0204N5 |
Supertex Inc |
P-Channel Enhancement-Mode Vertical DMOS Power FETs | |
12 | VP0204N6 |
Supertex Inc |
P-Channel Enhancement-Mode Vertical DMOS Power FETs |