)The VNP35N07FI, VNB35N07 and VNV35N07 t(sare monolithic devices made using STMicroelectronics VIPower M0 Technology, ucintended for replacement of standard power dMOSFETS in DC to 50 KHz applications. Built-in rothermal shut-down, linear current limitation and Povervoltage clamp protect the chip in harsh ObsoleteBLOCK DIAGRAM (∗) ISOWATT220 3 2 1 3 1 D2.
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VNP35N07 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
2 | VNP35N07-E |
STMicroelectronics |
fully autoprotected Power MOSFET | |
3 | VNP35NV04 |
STMicroelectronics |
OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET | |
4 | VNP35NV04-E |
STMicroelectronics |
fully autoprotected Power MOSFET | |
5 | VNP10N06 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
6 | VNP10N06FI |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
7 | VNP10N07 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
8 | VNP10N07FI |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
9 | VNP14N04 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
10 | VNP14N04FI |
STMicroelectronics |
OMNIFET: FULLY AUTOPROTECTED POWER MOSFET | |
11 | VNP14NV04 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
12 | VNP20N07 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET |