The VND10N06, VND10N06-1, VNP10N06FI and VNK10N06FM are monolithic devices made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments. 3 1 DPAK TO-252 3 2 1 .
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VNP10N06 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
2 | VNP10N07 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
3 | VNP10N07FI |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
4 | VNP14N04 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
5 | VNP14N04FI |
STMicroelectronics |
OMNIFET: FULLY AUTOPROTECTED POWER MOSFET | |
6 | VNP14NV04 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
7 | VNP20N07 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
8 | VNP20N07FI |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
9 | VNP28N04 |
STMicroelectronics |
OMNIFET: FULLY AUTOPROTECTED POWER MOSFET | |
10 | VNP28N04FI |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
11 | VNP35N07 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
12 | VNP35N07-E |
STMicroelectronics |
fully autoprotected Power MOSFET |