The VNP28N04 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear BLOCK DIAGRAM current limitation and overvoltage clamp protect the chip in harsh enviroments. Fault feedback can be detected by monitoring the.
During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user’s standpoint is that a small DC current (Iiss) flows into the Input pin in order to supply the internal circuitry. The device integrates: - OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VNP28N04FI |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
2 | VNP20N07 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
3 | VNP20N07FI |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
4 | VNP10N06 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
5 | VNP10N06FI |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
6 | VNP10N07 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
7 | VNP10N07FI |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
8 | VNP14N04 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
9 | VNP14N04FI |
STMicroelectronics |
OMNIFET: FULLY AUTOPROTECTED POWER MOSFET | |
10 | VNP14NV04 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
11 | VNP35N07 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
12 | VNP35N07-E |
STMicroelectronics |
fully autoprotected Power MOSFET |