The VND5N07 is a monolithic device designed in STMicroelectronics VIPower M0 technology, intended for replacement of standard Power MOSFETs from DC to 50KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin..
Max. on-state resistance (per ch.) Current limitation (typ)
) Drain-Source clamp voltage
RDS (on) ILIMH
VCLAMP
0.2Ω 5A 70V
uct(s
■ Linear current limitation rod
■ Thermal shutdown P
■ Short circuit protection te
■ Integrated clamp le
■ Low current drawn from input pin so
■ Diagnostic feedback through input pin b
■ Esd protection - O
■ Direct access to the gate of the power mosfet ) (analog driving) Obsolete Product(s
■ Compatible with standard Power MOSFET
3 1
DPAK TO-252
3 2 1
IPAK TO-251
ISOWATT200
SOT-82FM
Description
The VND5N07 is a monolithic device designed in STMicroelectronic.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VND5N07-E |
STMicroelectronics |
fully autoprotected Power MOSFET | |
2 | VND5004A-E |
STMicroelectronics |
high-side driver | |
3 | VND5004ASP30-E |
STMicroelectronics |
high-side driver | |
4 | VND5004CSP30 |
STMicroelectronics |
high-side driver | |
5 | VND5004DSP30 |
STMicroelectronics |
high-side driver | |
6 | VND5012AK-E |
ST Microelectronics |
DOUBLE CHANNEL HIGH SIDE DRIVER | |
7 | VND5025AK-E |
ST Microelectronics |
Double channel high side driver | |
8 | VND5025LAK-E |
ST Microelectronics |
Double channel high side driver | |
9 | VND5050AJ-E |
ST Microelectronics |
Double channel high side driver | |
10 | VND5050AK-E |
ST Microelectronics |
Double channel high side driver | |
11 | VND5050J-E |
ST Microelectronics |
Double channel high side driver | |
12 | VND5050K-E |
ST Microelectronics |
Double channel high side driver |