VND5N07-E - STMicroelectronics

VND5N07-E fully autoprotected Power MOSFET

The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the in.

Features

Max. on-state resistance (per ch.) Current limitation (typ) Drain-Source clamp voltage RDS (on) ILIMH VCLAMP 0.2Ω 5A 70V Description The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.
• Linear current limitation
• Thermal shutdown
• Short circuit protection
• Integrated clamp .