The VNB49N04, VNV49N04 are monolithic devices designed in STMicroelectronics™ VIPower™ M0 technology, intended for replacement of standard Power MOSFETs from DC up to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage .
Type
VCLAMP
RDS(ON)
ILIM
10
VNB49N04
t(s)VNV49N04
42 V
20 mΩ
49 A
uc
■ Linear current limitation rod
■ Thermal shutdown P
■ Short circuit protection te
■ Integrated clamp le
■ Low current drawn from input pin o
■ Diagnostic feedback through input pin bs
■ ESD protection O
■ Direct access to the gate of the Power -MOSFET (analog driving) Obsolete Product(s)
■ Compatible with standard Power MOSFET
3 1
TO-263(D2PAK)
1
PowerSO-10
Description
The VNB49N04, VNV49N04 are monolithic devices designed in STMicroelectronics™ VIPower™ M0 technology, intended for replacement of standard Power MOSFETs f.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VNB10N07 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
2 | VNB14N04 |
STMicroelectronics |
fully autoprotected Power MOSFET | |
3 | VNB14NV04 |
STMicroelectronics |
fully autoprotected Power MOSFET | |
4 | VNB20N07 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
5 | VNB28N04 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
6 | VNB35N07 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
7 | VNB35N07-E |
STMicroelectronics |
fully autoprotected Power MOSFET | |
8 | VNB35NV04 |
STMicroelectronics |
fully autoprotected Power MOSFET | |
9 | VNB35NV04-E |
STMicroelectronics |
fully autoprotected Power MOSFET | |
10 | VN0104 |
Supertex |
N-Channel Vertical DMOS FET | |
11 | VN0104N2 |
Supertex |
Understanding MOSFET | |
12 | VN0104N3 |
Supertex |
Understanding MOSFET |