The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the.
Type VNP35N07-E VNB35N07-E VNV35N07-E
Vclamp 70 V 70 V 70 V
RDS(on) 0.028 Ω 0.028 Ω 0.028 Ω
Ilim 35 A 35 A 35 A
Datasheet - production data
• Diagnostic feedback through input pin
• ESD protection
• Direct access to the gate of the Power
MOSFET (analog driving)
• Compatible with standard Power MOSFET
• Standard TO-220 package
• Compliant with 2002/95/EC European directive
Description
The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications.
Built-in th.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VNB35N07 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
2 | VNB35NV04 |
STMicroelectronics |
fully autoprotected Power MOSFET | |
3 | VNB35NV04-E |
STMicroelectronics |
fully autoprotected Power MOSFET | |
4 | VNB10N07 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
5 | VNB14N04 |
STMicroelectronics |
fully autoprotected Power MOSFET | |
6 | VNB14NV04 |
STMicroelectronics |
fully autoprotected Power MOSFET | |
7 | VNB20N07 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
8 | VNB28N04 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
9 | VNB49N04 |
STMicroelectronics |
FULLY AUTOPROTECTED POWER MOSFET | |
10 | VN0104 |
Supertex |
N-Channel Vertical DMOS FET | |
11 | VN0104N2 |
Supertex |
Understanding MOSFET | |
12 | VN0104N3 |
Supertex |
Understanding MOSFET |