VN3515L - Supertex Inc

VN3515L N-Channel Enhancement-Mode Vertical DMOS FETs

VN3515L VN4012L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 350V 400V RDS(ON) (max) 15Ω 12Ω VGS(th) (max) 1.8V 1.8V ID(ON) (min) 0.15A 0.15A Order Number / Package TO-92 VN3515L VN4012L Features ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Exce.

Features

❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inh.