VN2210 - Microchip

VN2210 N-Channel Vertical DMOS FET

VN2210 is an Enhancement-mode (normally-off) transistor that utilizes a vertical Double-diffused Metal-Oxide Semiconductor (DMOS) structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors as well as the high input impedance and positive temperature coefficien.

Features

• Free from Secondary Breakdown
• Low Power Drive Requirement
• Ease of Paralleling
• Low CISS and Fast Switching Speeds
• Excellent Thermal Stability
• Integral Source-drain Diode
• High Input Impedance and High Gain Applications
• Motor Controls
• Converters
• Amplifiers
• Switches
• Power Supply Circuits
• Drivers (Relays, Hammers, Solenoids, Lamps, Memory, Displays, Bipolar Transistors, etc.) General Description VN2210 is an Enhancement-mode (normally-off) transistor that utilizes a vertical Double-diffused Metal-Oxide Semiconductor (DMOS) structure and a well-proven silicon gate manufact.