VN2222KM - Siliconix

VN2222KM N-Channel Enhancement-Mode MOS Transistors

flCrSiliconix ~ incorporated VN2222KM, VN2222L N-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (.n ) (A) PACKAGE VN2222KM 60 7.5 0.25 TO-237 VN2222L 60 7.5 0.23 TO-92 TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDP06 (See Section 7) TO-237 BOTTOM VIEW 1 SOURCE 2 GATE 3 DR.

Features

internal gate-source zener diode VN2222KM 125 VN2222L 156 UNITS °C/W 6-89 VN2222KM, VN2222L ELECTRICAL CHARACTERISTICS1 PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)OSS VaS(th) Vas =OV,10=100jJ.A Vos = Vas, 10 = 1 mA Gate-Body Leakage lass Vos = 0 V, Vas = 15 V Zero Gate Voltage Drain Current On-State Drain Current 3 Drain-Source On-Reslstance3 ~~~:6~nductance 3 Common Source Output Conductance3 DYNAMIC loss 10(ON) rOS(ON) gFS gos VOS = 48 V Vas = 0 V I TJ = 125°C Vos = 10 V, Vas = 10 V Vas = 5 V, 10 = 0.2 A Vas = 10 V .